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ZXMN6A25G
Electrical characteristics (at T amb = 25°C unless otherwise stated)
Parameter
Symbol
Min.
Typ.
Max.
Unit Conditions
STATIC
Drain-source breakdown voltage
Zero gate voltage drain current
Gate-body leakage
Gate-source threshold voltage
Static drain-source on-state
resistance (*)
V (BR)DSS
I DSS
I GSS
V GS(th)
R DS(on)
60
1
1.0
100
0.050
0.070
V
A
nA
V
I D = 250 A, V GS =0V
V DS = 60V, V GS =0V
V GS =±20V, V DS =0V
I D = 250 A, V DS =V GS
V GS = 10V, I D = 3.6A
V GS = 4.5V, I D = 3.0A
Forward transconductance
(*) (?)
g fs
10.2
S
V DS = 15V, I D = 4.5A
Dynamic (?)
Input capacitance
Output capacitance
Reverse transfer capacitance
C iss
C oss
C rss
1063
104
64
pF
pF
pF
V DS = 30V, V GS =0V
f=1MHz
Switching (?) (?)
Turn-on-delay time
Rise time
Turn-off delay time
Fall time
Gate charge
t d(on)
t r
t d(off)
t f
Q g
3.8
4.0
26.2
10.6
11.0
ns
ns
ns
ns
nC
V DD = 30V, I D = 1A
R G ? 6.0W, V GS = 10V
V DS = 30V, V GS = 5V
I D = 1.4A
Total gate charge
Gate-source charge
Gate Drain Charge
Q g
Q gs
Q gd
20.4
4.1
5.1
nC
nC
nC
V DS = 30V, V GS = 10V
I D = 1.4A
Source-drain diode
Diode forward voltage (*)
V SD
0.85
0.95
V
T j =25°C, I S = 5.5A,
V GS =0V
Reverse recovery time (?)
Reverse recovery charge (?)
t rr
Q rr
22.0
21.4
ns
nC
T j =25°C, I S = 2.2A,
di/dt=100A/ s
NOTES:
(*) Measured under pulsed conditions. Pulse width
300 s; duty cycle
2%.
(?) Switching characteristics are independent of operating junction temperature.
(?) For design aid only, not subject to production testing.
Issue 2 - November 2006
? Zetex Semiconductors plc 2006
4
www.zetex.com
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